Low Frequency Noise in Insulated-Gate Strained-Si n-Channel Modulation Doped Field Effect Transistors
نویسندگان
چکیده
Sergey L. RUMYANTSEV, Kristel FOBELETS, Thomas HACKBARTH, and Michael S. SHUR Department of Electrical, Computer, and Systems Engineering, CII 9017, Rensselaer Polytechnic Institute, Troy, NY 12180-3590, U.S.A. Ioffe Institute of Russian Academy of Sciences, 194021 St-Petersburg, Russia Department of Electrical and Electronic Engineering, Imperial College London, Exhibition Road, London SW7 2BT, U.K. Daimler-Chrysler AG, Research Center Ulm, Wilhelm-Runge-St. 11, 89081 Ulm, Germany
منابع مشابه
1/f Noise and trap density in n-channel strained-Si/SiGe modulation doped field effect transistors
The low frequency (1/f) noise characteristics of Schottky-gated strained-Si n-channel modulation doped field effect transistors have been investigated as a function of Ge concentration for different virtual substrates. The gate voltage dependence of the 1/f noise agrees well with the McWhorter carrier number fluctuations model. The trap density (extracted using a Ge dependent potential barrier ...
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